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| PD -91703 IRF7341 HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 55V 3 6 4 5 RDS(on) = 0.050 Top V ie w Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 55 4.7 3.8 38 2.0 1.3 0.016 20 30 72 5.0 -55 to + 150 Units V A W W/C V V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 62.5 Units C/W www.irf.com 1 02/24/99 IRF7341 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 55 --- --- --- 1.0 7.9 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.059 0.043 0.056 --- --- --- --- --- --- 24 2.3 7.0 8.3 3.2 32 13 740 190 71 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.050 VGS = 10V, ID = 4.7A 0.065 VGS = 4.5V, I D = 3.8A --- V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 4.5A 2.0 VDS = 55V, VGS = 0V A 25 VDS = 55V, VGS = 0V, TJ = 55C -100 VGS = -20V nA 100 VGS = 20V 36 ID = 4.5A 3.4 nC VDS = 44V 10 VGS = 10V, See Fig. 10 12 VDD = 28V 4.8 ID = 1.0A ns 48 RG = 6.0 20 RD = 16, --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 60 120 2.0 A 38 1.2 90 170 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.0A, VGS = 0V TJ = 25C, IF = 2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 4.7A, di/dt 220A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4.7A. (See Figure 8) Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec 2 www.irf.com IRF7341 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 3.0V 3.0V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 1 20s PULSE WIDTH TJ = 150 C 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 ISD , Reverse Drain Current (A) 10 TJ = 150 C TJ = 25 C 1 1 3 4 V DS = 25V 20s PULSE WIDTH 5 6 0.1 0.2 0.5 0.8 V GS = 0 V 1.1 1.4 VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7341 ID = 4.7A RDS(on) , Drain-to-Source On Resistance (Normalized) 2.0 R DS (on), Drain-to-Source On Resistance () 2.5 0.120 0.100 1.5 0.080 1.0 VGS = 4.5V 0.060 0.5 VGS = 10V 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.040 0 10 20 30 40 TJ , Junction Temperature ( C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.12 200 RDS(on) , Drain-to-Source On Resistance ( ) EAS , Single Pulse Avalanche Energy (mJ) TOP 160 BOTTOM ID 2.1A 3.8A 4.7A 0.10 120 0.08 80 I D = 4.7A 0.06 40 0.04 0 2 4 6 8 10 A 0 25 50 75 100 125 150 V G S , Gate-to-Source V oltage (V ) Starting TJ , Junction Temperature ( C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current 4 www.irf.com IRF7341 1200 1000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 16 C, Capacitance (pF) 800 Ciss 12 600 8 400 Coss 200 4 Crss 0 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t2 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7341 SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M 5 8 E -A - 7 A1 B C D E e e1 H K 1 2 3 4 AM e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) A1 M CASBS 0 .10 (.00 4) L 8X 6 C 8X L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking 6 www.irf.com IRF7341 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99 www.irf.com 7 |
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